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Ionpure has developed the VNX-E and VNX-EX module specifically for the Microelectronics and Power industry. The specific targets were:
- 17.5 Megohm-cm with RO feed (~ 5 uS/cm)
- 18.0 Megohm-cm with DI feed (<1 uS/cm)
- 99% silica and boron removal for general microelectronics market
- 95% silica and boron removal for TFT/LCD market
- Higher flow module desirable for large polishing loop applications
- Higher recovery desirable for loop applications
- Lower cost
The Result - The VNX-E and the VNX-EX, CEDI optimized for Microelectronics
Ionpure R&D has developed the VNX-E and VNX-EX module. The outside packaging is IDENTICAL to the VNX50. The key differences are:
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VNX50
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VNX-E (LCD/TFT)
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VNX-EX (General)
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Feedwater Conductivity (FCE)
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<40 uS/cm
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<10 uS/cm
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<10 uS/cm
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Product Resistivity (2 pass RO feed)
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>10 megohm-cm
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>17.5 megohm-cm
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>17.5 megohm-cm
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Product Resistivity (DI Water feed)
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>10 megohm-cm
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>18 megohm-cm
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>18 megohm-cm
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Temp range
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5-45 °C
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20-45 °C
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20-45 °C
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Recovery
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90-95%
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98.5-99%
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95-97.5%
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Silica Removal
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90-95%
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95%
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99+%
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Boron Removal
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90%
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95%
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99+%
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Sodium Removal
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99+%
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99.8%
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99.9+%
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Chloride Removal
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99+%
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99.8%
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99.9+%
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